Thin oxide layer of several tens of nm was deposited onto duplex steel substrate by plasma oxidation. SEM image of the cross section was used to determine the thickness of the layer directly. Sample ...in sample holder was mounted onto the sample stage of the high resolution Auger spectroscopy apparatus equipped with a fixed ion gun. Simple depth profiling at well defined ion beam parameters was performed until substrate was reached. Then unsputtered area of the sample was chosen, sample was tilted to change the incidence angle (defined as the angle between the ion beam and normal to the sample surface) and depth profiling repeated at identical ion beam parameters as previously. Total sputtering time in each case is inversely proportional to the sputtering rate. To increase the range of possible incidence angles from approximately 45-70° defined by geometrical and engineering constraints a sample holder with tilted upper surface was manufactured to make use of another degree of freedom available from the sample stage; azimuthal rotation. In this manner, virtually all incidence angles from 0 to 90 ° became available. Measurements showed sputtering rate to be angle dependant, smaller values being located towards grazing angles and normal incidence with broad maximum in-between.
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